Stability factor of the Darlington composite transistor

Recently the author (Gupta 1969 a) has presented the theoretical investigation of the stability factor S, which indicates the rate of change of collector current with respect to reverse saturation current (I c0) and has explained its variation with biasing resistances. But the other stability factor S' which indicates the rate of change of collector current with respect to V BE (base-emitter voltage), when both I c0 and β are considered constant, was not considered. This stability factor plays an important role in the circuit design. Therefore the present communication deals with the study of the stability factor S' of the composite transistor and the effect of variation of biasing resistances on it.