论文信息 - Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques

Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques

Sizing of programmed defects on optical proximity correction (OPC) feature sis addressed using high resolution scanning electron microscope (SEM) images and image analysis techniques. A comparison and analysis of different sizing methods is made. This paper addresses the issues of OPC defect definition and discusses the experimental measurement results obtained by SEM in combination with image analysis techniques.

Larry S. Zurbrick | Ellen R. Laird | Lantian Wang | Paul Konicek

[1] Jay Lee,et al. Reticle defect size calibration using low-voltage SEM and pattern recognition techniques for sub-200-nm defects , 1999, Photomask Technology.

[2] Larry S. Zurbrick. Reticle defects on optical proximity correction features , 1998, Photomask and Next Generation Lithography Mask Technology.