A novelty design for radiation resistance of SiC by recrystallization-induced stacking faults

[1]  Chen Li,et al.  Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane , 2022, Applied Surface Science.

[2]  Chen Li,et al.  Phase transition and plastic deformation mechanisms induced by self-rotating grinding of GaN single crystals , 2021, International Journal of Machine Tools and Manufacture.

[3]  T. Shen,et al.  Microstructural and elemental evolution of polycrystalline α-SiC irradiated with ultra-high-fluence helium ions before and after annealing , 2020 .

[4]  Bingsheng Li,et al.  Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C , 2020 .

[5]  T. Polcar,et al.  The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen , 2020 .

[6]  E. Olivier,et al.  Investigation of the structure and chemical nature of Pd fission product agglomerations in irradiated TRISO particle SiC , 2020 .

[7]  T. Polcar,et al.  Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study , 2019 .

[8]  Yanbin Sheng,et al.  Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe20+ ions at room temperature , 2019, Applied Surface Science.

[9]  W. Han,et al.  Microstructural defects in He-irradiated polycrystalline α-SiC at 1000 °C , 2018, Journal of Nuclear Materials.

[10]  K. Terrani.  Accident tolerant fuel cladding development: Promise, status, and challenges , 2018 .

[11]  B. Liu,et al.  Diffusion of point defects near stacking faults in 3C-SiC via first-principles calculations , 2017 .

[12]  C. Sauder,et al.  Chemical compatibility between UO 2 fuel and SiC cladding for LWRs. Application to ATF (Accident-Tolerant Fuels) , 2017 .

[13]  P. Ruterana,et al.  Implantation damage formation in a-, c- and m-plane GaN , 2017 .

[14]  W. J. Weber,et al.  Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C , 2016 .

[15]  Ying Du,et al.  Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC , 2015 .

[16]  Ying Du,et al.  Recrystallization of He-ion implanted 6H-SiC upon annealing , 2015 .

[17]  Fu-Rong Chen,et al.  Atomic configuration of irradiation-induced planar defects in 3C-SiC , 2014 .

[18]  Aljaž Iveković,et al.  Current status and prospects of SiCf/SiC for fusion structural applications , 2013 .

[19]  Steven Shannon,et al.  Nanoscale engineering of radiation tolerant silicon carbide. , 2012, Physical chemistry chemical physics : PCCP.

[20]  Mohamed E. Sawan,et al.  Damage parameters of structural materials in fusion environment compared to fission reactor irradiation , 2012 .

[21]  Y. Katoh,et al.  Handbook of SiC properties for fuel performance modeling , 2007 .

[22]  J. Wong-Leung,et al.  Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC , 2005 .

[23]  William J. Weber,et al.  Displacement energy surface in 3C and 6H SiC , 2000 .

[24]  William J. Weber,et al.  The irradiation-induced crystalline-to-amorphous phase transition in α-SiC , 1996 .