论文信息 - Stabilization of MOS devices

Stabilization of MOS devices

Abstract It is shown that there are three basic instabilities present in MOS devices; ( a ) ion drift in the gate insulator, ( b ) temperature dependent deep trapping at the insulator-silicon interface and ( c ) generation of fast interface states under positive Bias Temperature (BT) stress. The sources of these instabilities and techniques suitable for eliminating them will be discussed.

S. R. Hofstein

[1] Hydrogen-induced surface space-charge regions in oxide-protected silicon , 1965 .

[2] E. H. Snow,et al. Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon , 1966 .

[3] W. Ko,et al. Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis , 1966 .

[4] F. Heiman,et al. The effects of oxide traps on the MOS capacitance , 1965 .

[5] A. Revesz. Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties , 1967 .

[6] S. R. Hofstein. An investigation of instability and charge motion in metal-silicon oxide-silicon structures , 1966 .

[7] A. S. Grove,et al. Ion Transport Phenomena in Insulating Films , 1965 .