论文信息 - Embedded EEPROM design in PD-SOI for application in an extended temperature range (−40° C up to 200° C)

Embedded EEPROM design in PD-SOI for application in an extended temperature range (−40° C up to 200° C)

This article describes a novel EEPROM cell, suitable for application at high-temperatures. Measurement results obtained from this cell are presented, as well as a simulation model for this cell. Furthermore, the means of memory design using this novel cell will be indicated.

Sonja Richter | Dagmar Kirsten | Dirk Nuernbergk | Steffen Richter

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