Plasma anodisation of Ga1-xInxAs (x=0.35 and 0.10) and study of MOS interface properties

Oxides have been grown on n-type Ga1-xInxAs/GaAs wafers (x=0.35 and 0.10) using plasma anodisation. According to C/V measurements, the surface can be biased into inversion and probably accumulation on Ga0.65In0.35As. The interface trap density is about 1012 cm-2eV-1 near midgap, and about 1013 cm-2eV-1 near flatband. MOS capacitors on Ga0.90In0.10As exhibit a high density of interface States 0.4-0.5 eV below the conduction band.