X-Band Burnout Characteristics Of GaAs MESFETS
暂无分享，去创建一个
X-Band microsecond pulse, millisecond pulse, and CW burnout data have been measured for GaAs MESFETs. Values of incident pulse power required to cause burn-out are presented and discussed.
[1] J. A. Turner,et al. Some Aspects of GaAs MESFET Reliability , 1976 .
[2] D. S. James,et al. A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's , 1981 .
[3] J. J. Whalen,et al. Microwave Nanosecond Pulse Burnout Properties of GsAs MESFETs , 1979 .