STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATES

The distribution of energetic ions implanted into an amorphous target is approximately Gaussian and can therefore be characterized by quoting a mean 〈R〉 and standard deviation σR for the range. A computer program has been written which calculates and plots 〈R〉 and σR as a function of energy for any ion impinging on either a single‐ or multiple‐element substrate. Typical results for ions of interest in Si and SiO2 are presented.