Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production
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Eicke R. Weber | Stefan Rein | Markus Glatthaar | Matthias Demant | Jonas Haunschild | E. Weber | S. Rein | J. Haunschild | Markus Motzko | M. Glatthaar | Jan Nievendick | Markus Motzko | J. Nievendick | M. Demant
[1] Stefan Rein,et al. Comparing Luminescence Imaging with Illuminated Lock-In Thermography and Carrier Density Imaging for Inline Inspection of Silicon Solar Cells , 2009 .
[2] Wilhelm Warta,et al. Diffusion lengths of silicon solar cells from luminescence images , 2007 .
[3] M. Kittler,et al. Temperature behaviour of extended defects in solar grade silicon investigated by photoluminescence and EBIC , 2003 .
[4] F. Secco d' Aragona,et al. Dislocation Etch for (100) Planes in Silicon , 1972 .
[5] G. Hahn,et al. Hydrogen passivation of extended defects in multicrystalline silicon solar cells , 2006 .
[6] O. Breitenstein,et al. PROGRESS IN SILICON SOLAR CELL CHARACTERIZATION WITH INFRARED IMAGING METHODS , 2008 .
[7] S. Glunz,et al. Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon , 2008 .
[8] P. Würfel,et al. The chemical potential of radiation , 1982 .
[9] M. Schubert,et al. Photoluminescence imaging of silicon wafers , 2006 .
[10] D. Macdonald,et al. Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence , 2008 .
[11] A. Holt,et al. Origin of the low carrier lifetime edge zone in multicrystalline PV silicon , 2009 .
[12] Wilhelm Warta,et al. Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images , 2009 .
[13] and J I Hanoka,et al. Electron-Beam-Induced Currents in Semiconductors , 1981 .
[14] R. Sinton,et al. Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data , 1996 .
[15] M. Stemmer. Monte Carlo simulation of the minority-carrier recombination at and around grain boundaries surrounded by a denuded zone revealed by light-beam-induced current mapping , 1994 .
[16] W. Warta,et al. Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon , 2003 .
[17] S. Peters,et al. Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells , 2001 .
[18] Wilhelm Warta,et al. PROGRESS WITH LUMINESCENCE IMAGING FOR THE CHARACTERISATION OF SILICON WAFERS AND SOLAR CELLS , 2007 .
[19] T. Trupke,et al. Photoluminescence: a surprisingly sensitive lifetime technique , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
[20] Spatially resolved characterization of silicon as‐cut wafers with photoluminescence imaging , 2009 .