Application of Scanning Nonlinear Dielectric Microscopy to Measurement of Dopant Profiles in Transistors

This paper presents results obtained when using scanning nonlinear dielectric microscopy (SNDM) to measure dopant profiles in transistors. Secondary ion mass spectrometry (SIMS) measurements of an epitaxial multilayer film on a standard sample and SNDM measurements of the sample surface showed that it was possible to obtain a uniform concentration region with a thickness of approximately 4–5 µm in each layer. An SNDM signal with a one-to-one correspondence to the dopant quantity was obtained. In real devices, dopant concentration profiles could be obtained as two-dimensional images by applying calibration curves from the standard sample to cross-sectional observations of n- and p-channel transistors.

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