Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

We developed thermally stable InAlAs/InGaAs HEMTs which have uniform offset-voltage in differential amplifiers. The standard deviation of their offset-voltages is only 6.2 mV, and their threshold voltage changes by less than 11 mV when they are annealed for 60 minutes at 330/spl deg/C. These properties are essential for the operation of 40-Gbit/s optical communication circuits.

[1]  T. Takahashi,et al.  40-Gbit/s D-type flip-flop and multiplexer circuits using InP HEMT , 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

[2]  D. Greenberg,et al.  A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer , 1992, IEEE Electron Device Letters.

[3]  K. Murata,et al.  An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs , 1997 .

[4]  T. Otsuji,et al.  Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs , 1998 .

[5]  April Brown,et al.  50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors , 1992 .

[6]  Reliability study of parasitic source and drain resistances of InP-based HEMTs , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[7]  Yoshitsugu Yamamoto,et al.  Thermal stability of AlInAs/GaInAs/InP heterostructures , 1995 .

[8]  Tetsuya Suemitsu,et al.  30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency , 1999 .

[9]  T. Enoki,et al.  An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.