Improved thermal stability of Ni-silicides on Si: C epitaxial layers
暂无分享,去创建一个
Matty Caymax | Matthias Bauer | Peter Verheyen | Shawn Thomas | S. Jakschik | Philippe Absil | Sofie Mertens | Shawn G. Thomas | Vladimir Machkaoutsan | Annick Lauwers | R. Loo | D. Theodore | M. Caymax | P. Verheyen | S. Jakschik | S. Mertens | E. Granneman | K. Verheyden | M. Bauer | D. Theodore | K. Verheyden | K. Vanormelingen | Ernst H. A. Granneman | V. Machkaoutsan | K. Vanormelingen | Anne Lauwers | Roger Loo | P. P. Absil
[1] J. Kittl,et al. Ni based silicides for 45 nm CMOS and beyond , 2004 .
[2] J. Kittl,et al. Ni- and Co-based silicides for advanced CMOS applications , 2003 .
[3] K. Okubo,et al. Improvement in NiSi/Si contact properties with C-implantation , 2005 .
[4] Matthias Bauer,et al. Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices , 2006 .