XPS study of laser-assisted etching of InP in a chlorine atmosphere

Laser assisted dry etching ablation of (001) InP wafers in a chlorine atmosphere is studied with spatially resolved x-ray photoelectron spectroscopy (XPS). The etching was carried out in a low pressure mixture of chlorine and helium (10% Cl2 in He). The wafers were exposed to 308 nm pulsed XeCl excimer laser radiation with several values of fluence near the ablation threshold of InP. It was found that, at room temperature, the applied etch mixture does not spontaneously react with the wafer. It was also found that laser irradiation at a fluence less than the ablation threshold of InP stimulates a chemical reaction between the chlorine and the wafer, forming In-Cl compounds. At the same time, the irradiation removes the reaction products.

[1]  R. Matz,et al.  Laser-induced photochemical etching of InP by HBr and HCl , 1989 .

[2]  Yasuhiro Yamamoto,et al.  Digital etching of GaAs: New approach of dry etching to atomic ordered processing , 1990 .

[3]  C. Lacelle,et al.  Structure damage in reactive‐ion and laser etched InP/GalnAs microstructures , 1995 .

[4]  Masahiro Kawasaki,et al.  Chemical dry etching mechanisms of GaAs surface by HCl and Cl2 , 1996 .

[5]  Ryuzo Iga,et al.  Growth rate suppression of InGaAs film grown by laser‐assisted chemical beam epitaxy , 1992 .

[6]  Takashi Meguro,et al.  Surface reaction control in digital etching of GaAs by using a tunable UV laser system: reaction control mechanism in layer-by-layer etching , 1995 .

[7]  Richard M. Osgood,et al.  Patterned, photon‐driven cryoetching of GaAs and AlGaAs , 1995 .

[8]  O. L. Bourne,et al.  Digital etching of III–V multilayered structures combined with laser ionization mass spectroscopy: Photon‐assisted depth profiling , 1993 .

[9]  Jacques Boulmer,et al.  PULSED LASER ETCHING OF SILICON : DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING , 1994 .

[10]  G. Tränkle,et al.  Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion , 1992 .

[11]  M. Rothschild,et al.  A review of excimer laser projection lithography , 1988 .

[12]  Jan J. Dubowski,et al.  Excimer Laser Microstructuring of InP and GaAs Semiconductor Compounds , 1996 .

[13]  K. Sugioka,et al.  Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source , 1994 .