Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET
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G. Simin | A. Koudymov | M.A. Khan | J. Yang | V. Adivarahan | M. Gaevski
[1] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.
[2] G. Simin,et al. Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm , 2005, IEEE Electron Device Letters.
[3] M. Shur,et al. SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs , 2002, IEEE Electron Device Letters.
[4] Michael S. Shur,et al. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor , 2001 .
[5] F. Ren,et al. Activation characteristics of ion-implanted Si+ in AlGaN , 2005 .
[6] Robert J. Trew,et al. Principles of Large-Signal MESFET Operation , 1994, IEEE Transactions on Microwave Theory and Techniques.
[7] John L. B. Walker,et al. High-Power GaAs FET Amplifiers , 1993 .
[8] Gerard J. Sullivan,et al. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization , 1999 .