论文信息 - Investigation of new dry high sensitive resist using 100 kV electron lithography

Investigation of new dry high sensitive resist using 100 kV electron lithography

Abstract 100 KV electron beam lithography (EBL) system was used for octavinylsilsesquioxane film characterization as an electron resist for nanometer scale microstructuring. The resist processing was totally dry: deposition by evaporation in vacuum and thermal development after exposure. High resist sensitivity and nanometer scale resolution were obtained.

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