Silicon MOSFETs, the microwave device technology for the 1990s

Silicon MOSFET technology using 1.5- mu m gate lengths has demonstrated excellent performance for 900-MHz applications. Circuit results for low-noise amplifiers, power amplifiers, mixers, and oscillators using this technology are discussed in comparison to other device technologies. Device results for 0.6- mu m-gate-length devices showing the microwave performance of silicon MOS transistors are discussed. These results, together with scaling predictions, indicate that microwave silicon MOSFETs will play a major role in the 1990s. The performance of devices with 0.6- mu m gate lengths indicates that silicon MOS will be the FET technology of choice for applications below 3 GHz. Advantages such as high voltage characteristics, low thermal conductivity of silicon, and the high operating junction temperature make silicon MOS a technology with immense potential for high-voltage X-band power applications.<<ETX>>

[1]  J. Bokor,et al.  89-GHz f/sub T/ room-temperature silicon MOSFETs , 1992, IEEE Electron Device Letters.

[2]  B. F. Cambou.  MMIC consumer application and production , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[3]  Mineo Katsueda,et al.  Highly efficient 1.5GHz si power MOSFET for digital cellular front end , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[4]  G. Guegan,et al.  High-frequency performance of submicrometer channel-length silicon MOSFETs , 1991, IEEE Electron Device Letters.

[5]  A. Hori,et al.  A self-aligned pocket implantation (SPI) technology for 0.2- mu m dual-gate CMOS , 1992, IEEE Electron Device Letters.

[6]  T. Okabe,et al.  Extremely high efficient UHF power MOSFET for handy transmitter , 1983, 1983 International Electron Devices Meeting.