A temperature accelerated model for high state retention loss of nitride storage flash memory

A temperature accelerated model, which is based on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high V/sub T/ states in MXVAND products with respect to bake temperature, bake time, and cycling numbers. The model parameters can be easily extracted and the fitting results show an acceptable accuracy. According to this model, the retention loss should follow a straight line on a semi-log scale and the slope is proportional to the temperature. Besides, the cycling number dependence is successfully reproduced by considering the erase degradation and the growth rate of oxide traps.

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