论文信息 - Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA

Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA

A novel process has been developed for the fabrication of sub-100 nm T-shaped gates for high performance MESFETs and HEMTs using a bilayer of Shipley UVIII DUV resist and polymethylmethacrylate (PMMA). The process is reliable and gives well defined metallised gates. Ratios of gate cross-section to gate length in excess of 20:1 have been achieved.

[1] M. Matsumura,et al. Submicrometre lift-off line with T-shaped cross-sectional form , 1981 .

[2] P. Chao,et al. 0.2 Micron length T-shaped gate fabrication using angle evaporation , 1983, IEEE Electron Device Letters.

[3] S. Thoms,et al. High resolution electron beam lithography studies on Shipley chemically amplified DUV resists , 1997 .

[4] H. Minami,et al. Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs , 1991 .

[5] Yeong-Lin Lai,et al. A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography , 1996 .