论文信息 - Series resistance in a MOS capacitor with a thin gate oxide

Series resistance in a MOS capacitor with a thin gate oxide

Abstract The effect of series resistance ( R s ) on the MOS capacitor high-frequency C – V characteristics has been studied. A new approximate formula for the dependence of bulk series resistance on gate electrode diameter is proposed. The influence of gate dimensions and substrate impurity type on the value of R s is studied. Finally the contribution of back-contact impedance to the total value of the series resistance is discussed.

[1] E. H. Rhoderick,et al. Metal–Semiconductor Contacts , 1979 .

[2] C. Claeys,et al. Two- and three-dimensional calculation of substrate resistance , 1988 .

[3] Mook-Seng Leong,et al. The resistance of an infinite slab with a disc electrode as a mixed boundary value problem , 1976 .

[4] H. Card,et al. Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits , 1976, IEEE Transactions on Electron Devices.

[5] E. H. Nicollian,et al. Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[6] D. Schroder,et al. Solar cell contact resistance—A review , 1984, IEEE Transactions on Electron Devices.

[7] Horst H. Berger,et al. Models for contacts to planar devices , 1972 .

[8] J.D. Plummer,et al. Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors , 1980, IEEE Transactions on Electron Devices.