论文信息 - Lead zirconate titanate thick films: Electrical properties and characterization by a LDV technique

Lead zirconate titanate thick films: Electrical properties and characterization by a LDV technique

The preparation and properties of thick (30-200 /spl mu/m) polycrystalline hard PZT films have been studied. The layers were deposited on Al/sub 2/O/sub 3/ substrates by spin-on and sintered at temperatures near 1050/spl deg/C. Natural sintering or RTA are used. The field induced displacements of the films are measured by LDV. It is shown that the permittivity and the piezoelectric coefficient d/sub 33/ depend on the film thickness. A simple interface layer model is presented to explain such a behaviour. The best films, obtained by RTA at 1150/spl deg/C, have a permittivity and a d/sub 33/ value more than one third of the bulk ceramic.

D. Barbier | P. Drogui | M. Troccaz | P. Gonnard | L. Lebrun

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