Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach
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G. Hellings | L. Witters | H. Bender | J. Mitard | W. Vandervorst | N. Horiguchi | T. Y. Hoffmann | E. Rosseel | C. Vrancken | T. Noda
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