We have grown high quality lattice-matched ZnCdSe and ZnSeTe on InP. To optimize the interfaces, the initial growth temperature was lowered and an As flux was used during the thermal treatment of InP substrates prior to epitaxial growth. Under optimized condition, 2D nucleation was observed by reflection high energy electron diffraction (RHEED) throughout the entire growth. Photoluminescence (PL), photoreflectance (PR), transmission electron microscopy (TEM) were used to carry out the sample characterization. Low temperature PL spectra for ZnCdSe show a narrow excitonic emission. PR spectra from ZnCdSe samples also suggest very high quality layers. The ZnSeTe exhibits a strong defect level emission at energy close to band gap and very weak deep level emission. TEM study suggest that the interfaces are comparable to those obtained between ZnSe and GaAs. These results, combined with the new possibilities from these materials, make InP an attractive substrate for II-VI epitaxy.