Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures
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N. El-Zein | Fred A. Kish | A. R. Sugg | S. C. Smith | R. D. Burnham | Nick Holonyak | N. Holonyak | J. Dallesasse | R. Burnham | N. El-Zein | S. Smith | F. Kish | T. Richard | T. A. Richard | John Dallesasse | A. Sugg
[1] A. R. Sugg,et al. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .
[2] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .
[3] N. Holonyak,et al. Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures , 1990 .
[4] M. Ludowise. Metalorganic chemical vapor deposition of III‐V semiconductors , 1985 .
[5] Karl Hess,et al. Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .
[6] N. Holonyak,et al. Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering , 1984 .
[7] N. Holonyak,et al. Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures , 1990 .
[8] N. Holonyak,et al. Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers , 1991 .