论文信息 - Optical bistability in distributed feedback semiconductor laser amplifiers

Optical bistability in distributed feedback semiconductor laser amplifiers

New theoretical and experimental results are presented for optical bistability in distributed feedback amplifiers at 1.5 μm. The onset of bistability occurs at input powers as low as 1 μW, a factor of about 1000 times less than the input predicted for passive DFB structures. The transient response exhibits a large spike as the amplifier goes through a resonance, in good agreement with the theoretical prediction.

Michael J. Adams | R. Wyatt

[1] Linewidth calculations for distributed-feedback lasers , 1985 .

[2] Tetsuya Nakai,et al. Optical Bistability in a Semiconductor Laser Amplifier , 1983 .

[3] M. Dagenais,et al. Femtojoule optical switching in nonlinear semiconductor laser amplifiers , 1986 .

[4] M. J. O'Mahony,et al. Assessment of switching speed of optical bistability in semiconductor laser amplifiers , 1986 .

[5] Gene Cooperman,et al. Self‐pulsing and chaos in distributed feedback bistable optical devices , 1982 .

[6] H. Kogelnik,et al. Coupled‐Wave Theory of Distributed Feedback Lasers , 1972 .

[7] Michael J. Adams,et al. Analysis of semiconductor laser optical amplifiers , 1985 .

[8] I. Henning,et al. A comparison of active and passive optical bistability in semiconductors , 1985, IEEE Journal of Quantum Electronics.

[9] Takashi Matsuoka,et al. Bistable output characteristics in semiconductor laser injection locking , 1985 .

[10] Mario Dagenais,et al. Room‐temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devices , 1985 .

[11] Michael J. Adams,et al. Time dependent analysis of active and passive optical bistability in semiconductors , 1985 .

[12] Elsa Garmire,et al. Theory of bistability in nonlinear distributed feedback structures (A) , 1979 .