High-low polysilicon-emitter SiGe-base bipolar transistors
暂无分享,去创建一个
J.M.C. Stork | J. Cressler | J. Comfort | E. Crabbé | J. Stork | J. Sun | J.D. Cressler | J.Y.-C. Sun | E.F. Crabbe | J.H. Comfort
[1] S.A. Petersen,et al. Hot carrier effects in advanced self-aligned bipolar transistors , 1985, 1985 International Electron Devices Meeting.
[2] J.M.C. Stork,et al. Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology , 1990, International Technical Digest on Electron Devices.
[3] M. Kurata,et al. Self-consistent particle simulation for (AlGa)As/GaAs HBTs under high bias conditions , 1989 .
[4] Judy L. Hoyt,et al. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors , 1989 .
[5] J. Cressler,et al. Single crystal emitter gap for epitaxial Si- and SiGe-base transistors , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[6] E. M. Buturla,et al. Finite-element analysis of semiconductor devices: the FIELDAY program , 1981 .
[7] 53 GHz-f/sub max/ Si/SiGe heterojunction bipolar transistors , 1992 .
[8] J.M.C. Stork,et al. SiGe-base heterojunction bipolar transistors: physics and design issues , 1990, International Technical Digest on Electron Devices.