On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs

The impact of channel Germanium content (Ge%) and gate stack Nitrogen content (N%), on bulk trap generation <tex>$(\Delta \text{V}_{\text{oT}})$</tex> time kinetics is studied by using DC and AC stress at different voltage <tex>$(\text{V}_{\text{GSTR}})$</tex> and temperature (T) in RMG HKMG Si and SiGe p-FinFETs. It is shown that <tex>$\Delta \text{V}_{\text{OT}}$</tex> magnitude is dependent on frequency <tex>$(f)$</tex>, which can make the resulting threshold voltage shift <tex>$(\Delta \text{V}_{\text{T}})$</tex> dependent on <tex>$f$</tex> for some stress conditions. The <tex>$f$</tex> dependence of <tex>$\Delta \text{V}_{\text{OT}}$</tex> and <tex>$\Delta \text{V}_{\text{T}}$</tex> becomes stronger at higher Ge% and weaker at higher N%. The <tex>$\Delta \text{V}_{\text{T}}$</tex> time kinetics is modeled for DC and AC stress under different stress conditions (V<inf>GSTR</inf>, T and <tex>$f)$</tex> and for different processes (Ge%, N%).

[1]  X. Federspiel,et al.  Key parameters driving transistor degradation in advanced strained SiGe channels , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[2]  Eduard A. Cartier,et al.  High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[3]  J. Sune,et al.  Temperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics , 2012, 2012 International Electron Devices Meeting.

[4]  S. Mahapatra,et al.  Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs , 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[5]  Narendra Parihar,et al.  Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs—Part-II: AC Stress and Recovery , 2018, IEEE Transactions on Electron Devices.

[6]  L. Witters,et al.  AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[7]  K. Ahmed,et al.  On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[8]  S. Mahapatra,et al.  Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[9]  Mark Y. Liu,et al.  Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology , 2010, 2010 IEEE International Reliability Physics Symposium.

[10]  Narendra Parihar,et al.  BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation , 2018, IEEE Transactions on Electron Devices.

[11]  T. Nigam,et al.  Impact of AC voltage stress on core NMOSFETs TDDB in FinFET and planar technologies , 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

[12]  Souvik Mahapatra,et al.  An Experimental Perspective of Trap Generation Under BTI Stress , 2015, IEEE Transactions on Electron Devices.

[13]  Narendra Parihar,et al.  Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions , 2018, IEEE Transactions on Electron Devices.

[14]  M. Rafik,et al.  AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[15]  A. Rahman,et al.  Intrinsic transistor reliability improvements from 22nm tri-gate technology , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).