论文信息 - Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM - 字舞流文

Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

S. Nakamura | U. Mishra | Feng Wu | S. Keller | C. Gupta | S. Pasayat | S.P. Den Baars