20.3 A 50MHz-Bandwidth 70.4dB-SNDR Calibration-Free Time-Interleaved 4th-Order Noise-Shaping SAR ADC

Noise-Shaping SAR (NS-SAR) is an emerging ADC architecture that offers both high resolution and high energy efficiency. State-of-the-art NS-SAR ADCs eliminate the need for op-amps, which relaxes design complexity and technology scaling issues. However, existing NS-SAR ADCs, with high FoM, are limited in bandwidth [1, 2] (typically in the MHz range). This makes NS-SAR ADCs unsuitable for applications that need bandwidths in the tens of MHz range, such as wireless communications. Traditionally, high-bandwidth, high-resolution applications utilize pipeline or continuous-time sigma-delta (CT-SD) ADCs, but these architectures are much more power hungry than the NS-SAR. Thus, to increase the bandwidth of NS-SAR ADCs and extend their low-power advantages, this work presents a new time-interleaved noise-shaping SAR (TINS-SAR) architecture that enables higher bandwidth. Although time-interleaving of ADCs is difficult for high resolution, interleaving impairments can be avoided when combining interleaving with noise-shaping. Our prototype 40nm CMOS TINS-SAR ADC has a measured SNDR of 70.4dB for a 50MHz bandwidth without calibration. It consumes only 13mW and occupies 0.061mm2, making it a potential substitute for CT-SD ADCs.

[1]  H. Kobayashi,et al.  Explicit formula for channel mismatch effects in time-interleaved ADC systems , 2000, Proceedings of the 17th IEEE Instrumentation and Measurement Technology Conference [Cat. No. 00CH37066].

[2]  Chun-Cheng Liu,et al.  28.1 A 0.46mW 5MHz-BW 79.7dB-SNDR noise-shaping SAR ADC with dynamic-amplifier-based FIR-IIR filter , 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

[3]  Nan Sun,et al.  A 13-ENOB 2nd-order noise-shaping SAR ADC realizing optimized NTF zeros using an error-feedback structure , 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).