The charge pumping method: Experiment and complete simulation

We calculate the charge pumping current of a metal‐oxide‐semiconductor transistor in the time domain utilizing a transient two‐dimensional device simulation. The dynamics of the interface states are included in the solution of the time‐dependent problem with full self‐consistency. The calculated charge pumping curve is in good agreement with the experiment, especially the rise and fall patterns of the signal, which are very sensitive to the source/drain profiles in small devices. The extraction of the density of states shows the range of validity of the analytical models and their restrictions. The influence of hot‐carrier stress on the charge pumping signal, which relates to inhomogeneous spatial distribution of interface states and fixed oxide charges, is also discussed in experiment and simulation.