Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS

Low-power building blocks for a serial transmitter operating up to 86 Gb/s are designed and implemented in a 130-nm SiGe BiCMOS technology with 150-GHz fT SiGe HBT. Power reduction is achieved by employing a low-voltage 2.5-V BiCMOS logic family, and by trading off bias current for inductive peaking. A serial transmitter test chip is fabricated in a 130-nm, 150-GHz fT SiGe BiCMOS technology. Operation is verified up to 86 Gb/s at room temperature (92Gb/s and 71Gb/s at 0degC and 100degC, respectively). As compared to recent state-of-the-art CMOS results, this work shows that by adding a SiGe HBT to a CMOS process one can achieve double the data rate with half the power dissipation

[1]  M. Duelk.  Next-generation 100 G Ethernet , 2005 .

[2]  Deog-Kyoon Jeong,et al.  Circuit techniques for a 40Gb/s transmitter in 0.13/spl mu/m CMOS , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[3]  T. Yao,et al.  SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[4]  M. Schlechtweg,et al.  InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s , 2006, IEEE Journal of Solid-State Circuits.

[5]  P. Chevalier,et al.  230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[6]  Hans-Martin Rein,et al.  Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology , 2003, IEEE J. Solid State Circuits.

[7]  M. Meghelli.  A 108Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[8]  Behzad Razavi,et al.  Design techniques for low-voltage high-speed digital bipolar circuits , 1994 .

[9]  S.P. Voinigescu,et al.  SiGe BiCMOS for Analog, High-Speed Digital and Millimetre-Wave Applications Beyond 50 GHz , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[10]  Mounir Meghelli,et al.  A 43-Gb/s full-rate clock transmitter in 0.18-μm SiGe BiCMOS technology , 2005 .

[11]  P. Schvan,et al.  Low-Voltage Topologies for 40-Gb/s Circuits in Nanoscale CMOS , 2007, IEEE Journal of Solid-State Circuits.

[12]  P. Chevalier,et al.  Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[13]  Liang-Hung Lu,et al.  40GHz Wide-Locking-Range Regenerative Frequency Divider and Low-Phase-Noise Balanced VCO in 0.18μm CMOS , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[14]  E.A. Sovero,et al.  STS-768 multiplexer with full rate output data retimer in InP HBT , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[15]  Y. Amamiya,et al.  1.5-V low supply voltage 43-Gb/s delayed flip-flop circuit , 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

[16]  S.P. Voinigescu,et al.  A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic , 2005, IEEE Journal of Solid-State Circuits.

[17]  M. Meghelli.  A 43-Gb/s full-rate clock transmitter in 0.18-/spl mu/m SiGe BiCMOS technology , 2005, IEEE Journal of Solid-State Circuits.

[18]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[19]  H.-D. Wohlmuth,et al.  A 60-Gb/s 0.7-V 10-mW monolithic transformer-coupled 2:1 multiplexer in 90 nm CMOS , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[20]  P. Chevalier,et al.  Design and Scaling of SiGe BiCMOS VCOs Above 100GHz , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[21]  Sorin P. Voinigescu,et al.  A 60 mW per lane, 4 x 23-Gb/s 27-1 PRBS generator , 2006 .

[22]  F. Leverd,et al.  A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C BiCMOS technology , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

[23]  T. Kjellberg,et al.  A 165-Gb/s 4:1 multiplexer in InP DHBT technology , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[24]  M. Meghelli.  A 132Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[25]  S.P. Voinigescu,et al.  The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks , 2006, IEEE Journal of Solid-State Circuits.

[26]  S.P. Voinigescu,et al.  30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits , 2005, IEEE Transactions on Microwave Theory and Techniques.

[27]  Sorin P. Voinigescu,et al.  Algorithmic design methodologies and design porting of wireline transceiver IC building blocks between technology nodes , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[28]  U. Langmann,et al.  Application of merged current switch logic for a built-in logic block observer operating at 1 Gbit/s and 1.2 V supply , 1997 .

[29]  M. Meghelli,et al.  A 132Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology , 2004 .

[30]  C. Portmann,et al.  An 800 mW 10 Gb Ethernet transceiver in 0.13 /spl mu/m CMOS , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[31]  K.H.K. Yau,et al.  Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation , 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[32]  Behzad Razavi,et al.  Stacked inductors and transformers in CMOS technology , 2001 .

[33]  S.P. Voinigescu,et al.  A 60 mW per Lane, 4$,times,$23-Gb/s 2$ ^7 -$1 PRBS Generator , 2006, IEEE Journal of Solid-State Circuits.