High-Temperature High-Power Packaging Techniques for HEV Traction Applications

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics required by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehiclesmore » and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

[1]  Patrick McCluskey,et al.  Thermomechanical analysis of gold-based SiC die-attach assembly , 2003 .

[2]  T. Hauck,et al.  Reliability of flip chip die attach in multichip mechatronic power module , 2000, 4th International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing. Proceedings. Presented at Adhesives in Electronics 2000 (Cat. No.00EX431).

[3]  Rembrandt Harmensz van Rijn.  A village road , 1916 .

[4]  R. H. Staunton,et al.  Evaluation of 2004 Toyota Prius Hybrid Electric Drive System , 2004 .

[5]  Guo-Quan Lu,et al.  Packaging of integrated power electronics modules using flip-chip technology , 2000, APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058).

[6]  U. Scheuermann.  Reliability of pressure contacted intelligent integrated power modules , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[7]  P. Beckedahl,et al.  Advanced drive systems , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[8]  Gerhard Wachutka,et al.  Reliability model for Al wire bonds subjected to heel crack failures , 2000 .

[9]  T.P. Chow,et al.  Integrated flip-chip flex-circuit packaging for power electronics applications , 2004, IEEE Transactions on Power Electronics.

[10]  J.D. van Wyk,et al.  Reliability and microstructure of lead-free solder die attach interface in silicon power devices , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[11]  G. Mitic,et al.  IGBT module technology with high partial discharge resistance , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[12]  R. Herzer,et al.  MiniSKiiP II - benchmark for 600V CIB modules , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[13]  Thierry Lebey,et al.  Investigations on DC conductivity and space charge in silicone gel , 2002, Annual Report Conference on Electrical Insulation and Dielectric Phenomena.

[14]  B. Waibel,et al.  Thermal Resistance and Temperature Cycling Endurance of DCB Substrates , 1990 .

[15]  Juan Carlos Balda,et al.  Direct Cooling of Propulsion drives for High Power Density and Low Volume , 2002 .

[16]  T.M. Jahns,et al.  Power electronics modules for inverter applications using flip-chip on flex-circuit technology , 2004, Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting..

[17]  F. Barlow,et al.  UBM Formation on Single Die/Dice for Flip Chip Applications , 1999 .

[18]  G. Lefranc,et al.  Localisation of electrical-insulation- and partial-discharge failures of IGBT modules , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[19]  V. Temple,et al.  MCT packaging , 1990, 40th Conference Proceedings on Electronic Components and Technology.

[20]  Guy Lefranc,et al.  High temperature reliability on automotive power modules verified by power cycling tests up to 150degreeC , 2003, Microelectron. Reliab..

[21]  Guo-Quan Lu,et al.  Three-dimensional flip-chip on flex packaging for power electronics applications , 2001 .

[22]  Vincent Bley,et al.  Contribution to the dimensioning of the different insulating materials used in high voltage power electronics module manufacturing , 2003, The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003..

[23]  V. Temple.  "Super" GTO's push the limits of thyristor physics , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[24]  B. Ozpineci,et al.  High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..

[25]  Jürgen Schulz-Harder,et al.  Advantages and new development of direct bonded copper substrates , 2003, Microelectron. Reliab..

[26]  Gary W. Hunter,et al.  An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center , 2003 .

[27]  Leon M. Tolbert,et al.  Testing, characterization, and modeling of SiC diodes for transportation applications , 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

[28]  Guy Lefranc,et al.  Aluminum bond-wire properties after 1 billion mechanical cycles , 2003, Microelectron. Reliab..

[29]  O. Lesaint,et al.  Optical and electrical investigation of dielectric gel behavior under high electrical field , 2004, Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004..

[30]  Z. Wang,et al.  Reliability of high temperature solder alternatives , 2006, Microelectron. Reliab..

[31]  Rajeev Joshi,et al.  Implementation of Pb-free bumping in power packaging , 2003, IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003..

[32]  Stéphane Lefebvre,et al.  Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling , 2006, Microelectron. Reliab..

[33]  O. Lesaint,et al.  Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements , 2003, 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003..

[34]  Oliver Schilling,et al.  Thermal Properties of Power Terminals in High Power IGBT Modules , 2006 .

[35]  Guo-Quan Lu,et al.  Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow , 2002 .

[36]  H. K. Charles,et al.  Steady-state thermal conductivity measurements of AlN and SiC substrate materials , 1989 .

[37]  A. Lindemann,et al.  Properties of direct aluminium bonded substrates for power semiconductor components , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[38]  R. Sodhi,et al.  Flip chip power MOSFET: a new wafer scale packaging technique , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[39]  J.L. Schanen,et al.  Electric field investigation in IGBT power modules , 2004, Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004..

[40]  D. W. Palmer,et al.  Aluminum Wire to Thick-Film Connections for High-Temperature Operation , 1978 .

[41]  G. Harman.  Wire Bonding in Microelectronics: Materials, Processes, Reliability, and Yield , 1997 .

[42]  A. Hamidi,et al.  Increased lifetime of wire bonding connections for IGBT power modules , 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

[43]  W. Fichtner,et al.  Electro-Thermo-Mechanical Simulations of Aluminum Bond Wires in IGBT-Packages , 1998 .

[44]  T. Hauck,et al.  Flip chip die attach development for multichip mechatronics power packages , 1999, Twenty Fourth IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.99CH36330).

[45]  J.M. Miller.  Power electronics in hybrid electric vehicle applications , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[46]  A. Lindemann,et al.  Properties of Direct Aluminum Bonded Substrates for Power Semiconductor Components , 2007, IEEE Transactions on Power Electronics.

[47]  Guo-Quan Lu,et al.  Flip-chip on flex integrated power electronics modules for high-density power integration , 2003 .

[48]  V.A.K. Temple,et al.  An advanced packaging technology for high performance power devices , 1997, IECEC-97 Proceedings of the Thirty-Second Intersociety Energy Conversion Engineering Conference (Cat. No.97CH6203).

[49]  Guo-Quan Lu,et al.  A lead-free, low-temperature sintering die-attach technique for high-performance and high-temperature packaging , 2004, Proceedings of the Sixth IEEE CPMT Conference on High Density Microsystem Design and Packaging and Component Failure Analysis (HDP '04).

[50]  T. Bloom.  The reliability of AlN power hybrids using Cu thick film conductive , 1990, 40th Conference Proceedings on Electronic Components and Technology.

[51]  P. McCluskey,et al.  Wire bond metallurgy for high temperature electronics , 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

[52]  O. Lesaint,et al.  Optical measurement of partial discharges in silicone gel under repetitive pulse voltage , 2005, Proceedings of 2005 International Symposium on Electrical Insulating Materials, 2005. (ISEIM 2005)..

[53]  K. Dalal,et al.  Design trade-offs and reliability of power circuit substrates with respect to varying geometrical parameters of direct copper bonded Al/sub 2/O/sub 3/ and BeO , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[54]  Xuejun Fan,et al.  Emerging MOSFET packaging technologies and their thermal evaluation , 2002, ITherm 2002. Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.02CH37258).

[55]  D. Olsen,et al.  Effects of Ambient Atmosphere on Aluminum - Copper wirebond Reliability , 1984 .

[56]  D. Palmer,et al.  Hybrid Microcircuitry for 300°C Operation , 1977 .

[57]  Eric Beyne,et al.  Direct gold and copper wires bonding on copper , 2003, Microelectron. Reliab..