An effective device design for thermal management of multifinger InGaP/GaAs collector‐up HBTs
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[1] Chien-Ping Lee,et al. Optimum design for a thermally stable multifinger power transistor , 2002 .
[2] W. Liu,et al. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors , 1996 .
[3] P. Ikalainen,et al. Novel HBT with reduced thermal impedance , 1995 .
[4] Yoshinobu Sasaki,et al. A Ka-Band GaAs Power MMIC , 1985, Microwave and Millimeter-Wave Monolithic Circuits.
[5] Yu-Chi Wang,et al. Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication , 2010, IEEE Transactions on Electron Devices.
[6] K. Tanaka,et al. Thermal performance of collector-up HBTs for small high-power amplifiers with a novel thermal via structure underneath the HBT fingers , 2005, IEEE Transactions on Components and Packaging Technologies.
[7] H. Morkoç,et al. Thermal design studies of high-power heterojunction bipolar transistors , 1989 .