Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS
暂无分享,去创建一个
N. Cherkashin | J. Hartmann | O. Weber | F. Andrieu | S. Deleonibus | C. Tabone | T. Ernst | C. Le Royer | V. Carron | C. Dupré | Y. Bogumilowicz | F. Ducroquet | L. Clavelier | M. Hytch | D. Rouchon | H. Dansas | A. Papon | C. L. Royer | Cecilia Dupre | Thomas Ernst | Olivier Weber | J. Hartmann | Nikolay Cherkashin | Martin Hÿtch | D. Rouchon
[1] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .
[2] S. Laux,et al. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .
[3] Martin Hÿtch,et al. Quantitative measurement of displacement and strain fields from HREM micrographs , 1998 .
[4] Dimitri A. Antoniadis,et al. Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x , 2001 .
[5] T. Irisawa,et al. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures , 2002 .
[6] Ying Zhang,et al. Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[7] M. Lee,et al. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors , 2005 .