Tunable electron transport with intergranular separation in FePt-C nanogranular films

We report electron transport mechanism in FePt-C granular films as a function of temperature by varying intergranular separation. FePt-C nanogranular films were prepared by sputtering on MgO substrates. From magnetic measurement of the sample, a coercivity of about 3T was found in the perpendicular direction. Above 25 K, the electrical resistivity of the films were found to obey Mott variable range hopping, Efros-Shklovskii variable range hopping and extended critical regime depending on the intergranular separation. However, at lower temperatures it deviates from the above behaviour showing an increase in conductance. Reduced activation energy calculated from resistivity data of these films shows metal-insulator transition. The metallic nature observed at low temperature was attributed to the intergranular ferromagnetic type ordering between granules that enhances the transport of electrons. Intergranular separation, thus, can be used as a tool to engineer the electron transport mechanism to different hopping regimes or extended critical regime in these films.

[1]  T. Ina,et al.  Impact of carbon segregant on microstructure and magnetic properties of FePt-C nanogranular films on MgO (001) substrate , 2019, Acta Materialia.

[2]  S. Yuasa,et al.  Enhancement in the interfacial perpendicular magnetic anisotropy and the voltage-controlled magnetic anisotropy by heavy metal doping at the Fe/MgO interface , 2018 .

[3]  S. Yuasa,et al.  Voltage controlled interfacial magnetism through platinum orbits , 2017, Nature Communications.

[4]  S. Okamoto,et al.  Magnetic characteristics and nanostructures of FePt granular films with GeO2 segregant , 2017 .

[5]  Z. Wen,et al.  Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures , 2016, Scientific Reports.

[6]  K. Hono,et al.  Influence of MgO underlayers on the structure and magnetic properties of FePt-C nanogranular films for heat-assisted magnetic recording media , 2016 .

[7]  Tianran Chen,et al.  Enhancement of hopping conductivity by spontaneous fractal ordering of low-energy sites , 2016, 1606.01551.

[8]  C. Duan,et al.  Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction , 2016, Scientific Reports.

[9]  C. Grimaldi Theory of percolation and tunneling regimes in nanogranular metal films , 2014, 1406.4982.

[10]  Li Zhang,et al.  FePt-C granular thin film for heat-assisted magnetic recording (HAMR) media , 2014 .

[11]  S. Mangin,et al.  Magnetic anisotropy modified by electric field in V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction , 2013 .

[12]  E. Jiang,et al.  Evolution of magnetoresistance mechanisms in granular Co/C films with different conduction regimes , 2013 .

[13]  A. Timopheev,et al.  Positive magnetoresistance in granular magnetic films with perpendicular anisotropy , 2011 .

[14]  J. Zhu,et al.  Buffer Layers for Highly Ordered L1$_{0}$ FePt-Oxide Thin Film Granular Media at Reduced Processing Temperature , 2010, IEEE Transactions on Magnetics.

[15]  K. Hono,et al.  L10 FePt–C Nanogranular Perpendicular Anisotropy Films with Narrow Size Distribution , 2008 .

[16]  P. Tiberto,et al.  Low-temperature magnetotransport effects and magnetic inhomogeneity in FePt-based ferromagnetic thin films , 2008 .

[17]  P. Tiberto,et al.  Anomalous low-temperature magnetoresistance dips in sputtered ferromagnetic thin films and multilayers , 2008 .

[18]  L. Nasi,et al.  Low-temperature magnetic softening by competing anisotropy compensation in a granular FePt–Ag multilayer , 2007 .

[19]  K. Efetov,et al.  Granular electronic systems , 2006, cond-mat/0603522.

[20]  K. Hono,et al.  On low-temperature ordering of FePt films , 2005 .

[21]  C. -. Wur,et al.  Magnetoresistance of FePt nanograins embedded in carbon matrix , 2005 .

[22]  T. Koyama,et al.  Size dependence of ordering in FePt nanoparticles , 2004 .

[23]  T. Ohkubo,et al.  Size effect on the ordering of FePt granular films , 2003 .

[24]  S. Chatterjee,et al.  Crossover from Mott to Efros-Shklovskii variable-range-hopping conductivity in conducting polyaniline , 1998 .

[25]  A. Zabrodskii Coulomb gap and metal?insulator transitions in doped semiconductors , 1998 .

[26]  Inoue,et al.  Theory of tunneling magnetoresistance in granular magnetic films. , 1996, Physical review. B, Condensed matter.

[27]  C. O. Yoon,et al.  Tuning through the critical regime of the metal-insulator transition in conducting polymers by pressure and magnetic field , 1994 .

[28]  Rosenbaum,et al.  Crossover from Mott to Efros-Shklovskii variable-range-hopping conductivity in InxOy films. , 1991, Physical review. B, Condensed matter.

[29]  Slonczewski Jc,et al.  Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier. , 1989 .

[30]  M. Richter,et al.  Density of states within the Coulomb gap , 1987 .

[31]  Boris I Shklovskii,et al.  Coulomb gap and low temperature conductivity of disordered systems , 1975 .