Carrier injection characteristics of the metal/organic junctions of organic thin‐film devices

The junction characteristics of metal/organic thin film (M/Org) interfaces were investigated by measuring the displacement currents for the structure of M/Org/SiO2/Si devices. The observed currents were ascribed to the carriers injected from metal electrodes into organic films, which were markedly dependent both on metals and organic materials employed. The threshold bias for carrier injection was also found to be dependent on the metal work function. The results can thus provide some detailed information about the junction properties including the potential barriers formed at the M/Org interfaces.