Study of potential high-k dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

In this paper, we use analytical models of the direct tunneling gate leakage current to determine the high-k dielectric suitable for the nanoscale ultra-thin body SOI MOSFET structure with the predicted equivalent oxide thickness (EOT) and the maximum value of gate leakage current according to the requirements of the latest ITRS roadmap for three technological nodes. The most important criteria for selecting alternative dielectrics (maximum gate leakage current, EOT, electron effective mass, dielectric constant k-value, barrier height and SiO2 thickness as an interfacial layer) were taken into account to determine the suitability of the gate oxide materials. In the ideal case without an interfacial layer, HfO2 and Lu2O3 were found to be the best gate oxide materials for the 17, 15 and 14 nm technological node requirements.

[1]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[2]  J. Robertson.  Band offsets of wide-band-gap oxides and implications for future electronic devices , 2000 .

[3]  E. Merzbacher.  Quantum mechanics , 1961 .

[4]  Guido Groeseneken,et al.  Scaling CMOS: Finding the gate stack with the lowest leakage current , 2005 .

[5]  Enrico Sangiorgi,et al.  Tunneling into interface states as reliability monitor for ultrathin oxides , 2000 .

[6]  C. Hu,et al.  Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation , 1994 .

[7]  Chih-Hung Chen,et al.  A review of gate tunneling current in MOS devices , 2006, Microelectron. Reliab..

[8]  E. Cartier,et al.  Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .

[9]  Chenming Hu,et al.  MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations , 2003 .

[10]  Antonio Cerdeira,et al.  Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-k dielectrics for nanoscale double-gate MOSFETs , 2011 .

[11]  James D. Plummer,et al.  Material and process limits in silicon VLSI technology , 2001, Proc. IEEE.

[12]  R. Ritzenthaler,et al.  Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node , 2010, DRC 2010.

[13]  A. Messiah.  Quantum Mechanics , 1961 .

[14]  C. Hu,et al.  Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling , 2001 .

[15]  Max C. Lemme,et al.  Navigation aids in the search for future high-k dielectrics: Physical and electrical trends , 2007 .

[16]  J. Locquet,et al.  High-K dielectrics for the gate stack , 2006 .

[17]  Gérard Ghibaudo,et al.  Stress induced leakage current at low field in ultra thin oxides , 2001, Microelectron. Reliab..

[18]  Olivier Faynot,et al.  A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation , 2011 .

[19]  Modeling of direct tunneling current in multi-layer gate stacks , 2003 .

[20]  Y. Taur,et al.  Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.

[21]  Inclusion of direct tunneling gate current in the Symmetric Doped Double Gate MOSFETs Model , 2009, 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE).

[22]  Accurate modeling of Metal/HfO2/Si capacitors , 2008 .

[23]  A. Stesmans,et al.  Trap-assisted tunneling in high permittivity gate dielectric stacks , 2000 .

[24]  Chenming Hu,et al.  Ultra-thin silicon dioxide leakage current and scaling limit , 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

[25]  Remote phonon scattering in field-effect transistors with a high κ insulating layer , 2008 .

[26]  E. Cartier,et al.  Determination of the energy-dependent conduction band mass in SiO2 , 1999 .

[27]  D. Adler,et al.  Quantum Mechanics For Applied Physics And Engineering , 1981 .

[28]  M. Heyns,et al.  Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures , 1995 .