Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes

Avalanche noise measurements have been performed on a range of homojunction GaAs p/sup +/-i-n/sup +/ and n/sup +/-i-p/sup +/ diodes with "i" region widths, /spl omega/ from 2.61 to 0.05 /spl mu/m. The results show that for /spl omega//spl les/1 /spl mu/m the dependence of excess noise factor F on multiplication does not follow the well-established continuous noise theory of McIntyre [1966]. Instead, a decreasing noise factor is observed as /spl omega/ decreases for a constant multiplication. This reduction in F occurs for both electron and hole initiated multiplication in the thinner /spl omega/ structures even though the ionization coefficient ratio is close to unity. The dead-space, the minimum distance a carrier must travel to gain the ionization threshold energy, becomes increasingly important in these thinner structures and largely accounts for the reduction in noise.

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