Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
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Bantval J. Baliga | H. R. Kirk | M. Bhatnagar | G. Rozgonyi | G. A. Rozgonyi | M. Bhatnagar | H. Kirk | B. Baliga
[1] K. Koga,et al. Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method , 1992 .
[2] M. Shur,et al. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide , 1991, Proc. IEEE.
[3] S. H. Hagen. Surface‐Barrier Diodes on Silicon Carbide , 1968 .
[4] M. Bhatnagar,et al. Comparison of Ti and Pt silicon carbide Schottky rectifiers , 1992, 1992 International Technical Digest on Electron Devices Meeting.
[5] Philip G. Neudeck,et al. 2000 V 6H-SIC P-N JUNCTION DIODES GROWN BY CHEMICAL VAPOR DEPOSITION , 1994 .
[6] J. Sullivan,et al. Electron transport of inhomogeneous Schottky barriers: A numerical study , 1991 .
[7] R. Davis,et al. Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide , 1991 .
[8] J. Waldrop. Schottky barrier height of metal contacts to p‐type alpha 6H‐SiC , 1994 .
[9] B. J. Baliga,et al. Silicon-carbide high-voltage (400 V) Schottky barrier diodes , 1992, IEEE Electron Device Letters.
[10] P. Ivanov,et al. Recent developments in SiC single-crystal electronics , 1992 .
[11] Michael Dudley,et al. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films , 1994 .
[12] C. Zetterling,et al. Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide , 1993 .
[13] R. T. Tung,et al. ELECTRON TRANSPORT OF INHOMOGENEOUS SCHOTTKY BARRIERS , 1991 .
[14] A. Christou,et al. Pt and PtSix Schottky contacts on n‐type β‐SiC , 1989 .
[15] B. J. Baliga,et al. Comparison of 6H-SiC, 3C-SiC, and Si for power devices , 1993 .
[16] R. B. Campbell,et al. AuSiC Schottky barrier diodes , 1974 .
[17] J. Waldrop,et al. Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence , 1993 .
[18] P. Neudeck,et al. Performance limiting micropipe defects in silicon carbide wafers , 1994, IEEE Electron Device Letters.
[19] R. Stein. Formation of macrodefects in SiC , 1993 .
[20] C. Carter,et al. Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography , 1993 .
[21] Robert F. Davis,et al. Metal Schottky barrier contacts to alpha 6H:SiC , 1992 .
[22] D. Ioannou,et al. The effect of heat treatment on Au Schottky contacts on β-SiC , 1987, IEEE Transactions on Electron Devices.
[23] E. Sakuma,et al. Schottky barrier diodes on 3C‐SiC , 1985 .
[24] S. M. Sze,et al. Physics of semiconductor devices , 1969 .