The synthesis of few-layered graphene by the arc discharge sputtering of a Si-C electrode

The morphology of Si-C soot synthesized by a DC arc discharge in a helium atmosphere at a pressure of 25 torr with different concentrations of Si was studied experimentally. An increase in silicon concentration in the sputtered electrode lead to the formation of graphene structures with 1–7 graphene layers, patterned with nanoparticles of SiC. When the concentration of Si in the dispersed electrode was 16.5% and above, the soot contained small amounts of amorphous carbon; virtually, all the material was a composite of SiC-graphene. The study findings suggest that the influence of Si on carbon condensation is due to the formation of silicon carbide nanoparticles at the stage of formation of bulk carbon clusters, which act as a nucleus for the growth of graphene planes.

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