论文信息 - Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

A refined structure, namely ring in Ge2Sb2Te5 (GST) structure (RIG) for low reset current and high thermal efficiency is proposed in this investigation. A comprehensive thermal analysis of the phase change random access memory (PCRAM) by three-dimension finite element modeling is proposed. The effect of temperature on device cell design and optimization is investigated. This study provides an insight into the thermal issues and phenomena in the PCRAM.

Songlin Feng | Zhitang Song | Yuefeng Gong | Yun Ling

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