论文信息 - Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

A detailed statistical characterization of drain current local and global variability in sub 15nm gate length Si/SiGe Trigate NW pMOSFETs is carried out. An analytical mismatch model is used to extract the main matching parameters. Our results indicate that, despite their very aggressive dimensions, such devices maintain relatively good variability performance.

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