论文信息 - Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices.

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