论文信息 - Multicolor InGaAs quantum-dot infrared photodetectors

Multicolor InGaAs quantum-dot infrared photodetectors

In this letter, we report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-assembled quantum dots were grown on InGaP matrix via metal-organic chemical vapor deposition and fabricated as intersubband photoconductive structure. Bias-controlled two-color photoconductive responses were obtained at two different infrared window, mid-infrared of /spl lambda/=5.5 /spl mu/m and far-infrared of /spl lambda/=9.2 /spl mu/m at 77 K. Our devices were operated with low dark currents and high optical gains, and resulted in peak detectivity D/sup */ of 4.7/spl times/10/sup 9/ cm Hz/sup 1/2//W at /spl lambda/=5.5 /spl mu/m with bias of -2.0 V, and 7.2/spl times/10/sup 8/ cm Hz/sup 1/2//W at /spl lambda/=9.2 /spl mu/m with bias of -0.8 V.

J.S. Harris | S.M. Kim | J. Harris | S.M. Kim

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