论文信息 - a-SiC x N y thin films deposited by a microwave plasma assisted C VD process using a CH 4 /N 2 /Ar/HMDSN mixture: methane rat e effect

a-SiC x N y thin films deposited by a microwave plasma assisted C VD process using a CH 4 /N 2 /Ar/HMDSN mixture: methane rat e effect

Amorphous silicon carbonitride thin films were deposited using a microwave plasma assisted chemical vapour deposition process fed with a mixture of methane, nitrogen, argon and hexamethyldisilazane (Si2C6H19N). Effects of the methane rate on thin films composition, n anostructuration and characteristics are investigated by means of various techniques such as X-ray Photoelectron Spectroscopy, Fourier Transform Infrared Spectroscopy, Transmission Electron Microscopy and UV-Visible absorption. The raise of the methane rate results in less organic, denser films and in an increase of refractive index.

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