论文信息 - Anisotropic etching of silicon

Anisotropic etching of silicon

Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of

K. Bean | Nathanson | Nathanson | Kenneth E. Bean

[1] W. C. Dash,et al. Copper Precipitation on Dislocations in Silicon , 1956 .

[2] D. R. Turner. Electropolishing Silicon in Hydrofluoric Acid Solutions , 1958 .

[3] Bertram Schwartz,et al. Chemical Etching of Silicon II . The System , , , and , 1960 .

[4] B. Schwartz,et al. Chemical Etching of Silicon III . A Temperature Study in the Acid System , 1961 .

[5] R. Finne,et al. A Water‐Amine‐Complexing Agent System for Etching Silicon , 1967 .

[6] K. Bean,et al. The influence of crystal orientation on silicon semiconductor processing , 1969 .

[7] F. Lee,et al. Dielectric isolated integrated circuit substrate processes , 1969 .

[8] D. F. Weirauch. Correlation of the anisotropic etching of single−crystal silicon spheres and wafers , 1975 .

[9] M. Declercq. A new C-MOS technology using anisotropic etching of silicon , 1975, IEEE Journal of Solid-State Circuits.

[10] D. L. Kendall. On etching very narrow grooves in silicon , 1975 .

[11] W. R. Runyan,et al. Dielectric Isolation: Comprehensive, Current and Future , 1977 .

[12] E. Bassous,et al. The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon , 1978 .

[13] W. Anacker,et al. Anisotropic Etching of Silicon , 1978 .