An alternative expression for the impact ionisation coefficient in a semiconductor derived using lucky drift theory
暂无分享,去创建一个
Lucky drift theory is used to derive an alternative expression for the impact ionisation coefficient in a semiconductor to that given by B.K. Ridley (1983). This alternative expression has a simple physical interpretation. It also agrees well with a Monte Carlo simulation for a model semiconductor.
[1] B. Ridley. A model for impact ionisation in wide-gap semiconductors , 1983 .
[2] B. Ridley. Lucky-drift mechanism for impact ionisation in semiconductors , 1983 .
[3] G. A. Baraff,et al. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors , 1962 .
[4] W. Shockley. Problems related to p-n junctions in silicon , 1961 .