Interface thermodynamic state-induced high-performance memristors.

A new class of memristors based on long-range-ordered CeO2 nanocubes with a controlled degree of self-assembly is presented, in which the regularity and range of the nanocubes can be greatly improved with a highly concentrated dispersed surfactant. The magnitudes of the hydrophobicity and surface energy components as functions of surfactant concentration were also investigated. The self-assembled nanostructure was found to demonstrate excellent degradation in device threshold voltage with excellent uniformity in resistive switching parameters, particularly a set voltage distribution of ∼ 0.2 V over 30 successive cycles and a fast response time for writing (0.2 μs) and erasing (1 μs) operations, thus offering great potential for nonvolatile memory applications with high performance at low cost.

[1]  H. Busscher,et al.  DNA-mediated bacterial aggregation is dictated by acid–base interactions , 2011 .

[2]  Younan Xia,et al.  One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications , 2003 .

[3]  Sean Li,et al.  Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells. , 2013, ACS applied materials & interfaces.

[4]  L. Sagalowicz,et al.  Self-assembled structures and pKa value of oleic acid in systems of biological relevance. , 2010, Langmuir : the ACS journal of surfaces and colloids.

[5]  C. J. Oss.  Hydrophobicity of biosurfaces — Origin, quantitative determination and interaction energies , 1995 .

[6]  L. Gao,et al.  Controlled synthesis and self-assembly of CeO2 nanocubes. , 2006, Journal of the American Chemical Society.

[7]  M. Flytzani-Stephanopoulos,et al.  Active Nonmetallic Au and Pt Species on Ceria-Based Water-Gas Shift Catalysts , 2003, Science.

[8]  B. Sheldon,et al.  Space charge induced surface stresses: implications in ceria and other ionic solids. , 2011, Physical review letters.

[9]  M. Kozicki,et al.  Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.

[10]  I. Cernica,et al.  Self-assembly characteristics of gold nanoparticles in the presence of cysteine , 2009 .

[11]  O. Glatter,et al.  Submicrometer-sized Pickering emulsions stabilized by silica nanoparticles with adsorbed oleic acid. , 2013, Langmuir : the ACS journal of surfaces and colloids.

[12]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[13]  A. Trovarelli,et al.  Catalytic Properties of Ceria and CeO2-Containing Materials , 1996 .

[14]  Byung Joon Choi,et al.  Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[15]  Tae Whan Kim,et al.  Polymer–ultrathin graphite sheet–polymer composite structured flexible nonvolatile bistable organic memory devices , 2011, Nanotechnology.

[16]  H. Imai,et al.  Characteristics of CeO2 Nanocubes and Related Polyhedra Prepared by Using a Liquid−Liquid Interface , 2010 .

[17]  Sean Li,et al.  Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films , 2012 .

[18]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[19]  Christian Teichert,et al.  Self-organization of nanostructures in semiconductor heteroepitaxy , 2002 .

[20]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[21]  Lars Samuelson,et al.  Self-forming nanoscale devices , 2003 .

[22]  Salah M. Bedair,et al.  ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111) , 1994 .

[23]  Dewei Chu,et al.  Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition , 2013, Nanoscale Research Letters.

[24]  N. El-Masry,et al.  Violet/blue emission from epitaxial cerium oxide films on silicon substrates , 1997 .

[25]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[26]  H. Imai,et al.  Characteristics of Multilayered Nanostructures of CeO2 Nanocrystals Self-Assembled on an Enlarged Liquid–Gas Interface , 2011 .

[27]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[28]  Sang‐Yup Lee,et al.  Enhanced photoluminescence by tyrosine-containing bolaamphiphile self-assembly. , 2013, Langmuir : the ACS journal of surfaces and colloids.

[29]  Sean Li,et al.  Tuneable resistive switching characteristics of In2O3 nanorods array via Co doping , 2013 .

[30]  W. Lu,et al.  High-density Crossbar Arrays Based on a Si Memristive System , 2008 .

[31]  Sean Li,et al.  Direct growth of TiO2 nanotubes on transparent substrates and their resistive switching characteristics , 2012 .

[32]  R. Waser,et al.  Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. , 2012, Nature materials.

[33]  Albert Rose,et al.  Space-Charge-Limited Currents in Solids , 1955 .

[34]  P. Sharma,et al.  Adhesion of Paenibacillus polymyxa on chalcopyrite and pyrite: surface thermodynamics and extended DLVO theory , 2003 .

[35]  Dewei Chu,et al.  High-performance nanocomposite based memristor with controlled quantum dots as charge traps. , 2013, ACS applied materials & interfaces.

[36]  Sean Li,et al.  Bi-stable resistive switching characteristics in Ti-doped ZnO thin films , 2013, Nanoscale Research Letters.

[37]  A. Dana,et al.  Self-assembled peptide nanofiber templated one-dimensional gold nanostructures exhibiting resistive switching. , 2012, Langmuir : the ACS journal of surfaces and colloids.

[38]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[39]  J. C. Scott,et al.  Nonvolatile Memory Elements Based on Organic Materials , 2007 .