A new power MOSFET generation designed for synchronous rectification
暂无分享,去创建一个
R. Siemieniec | M. Rosch | C. Moslacher | O. Blank | M. Frank | M. Hutzler
[1] R. Siemieniec,et al. A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode , 2005, 2005 European Conference on Power Electronics and Applications.
[2] Rudy Severns. Design of Snubbers for Power Circuits , .
[3] I. Pawel,et al. Theoretical evaluation of maximum doping concentration, breakdown voltage and on-state resistance of field-plate compensated devices , 2008 .
[4] Yusuke Kawaguchi,et al. Silicon limit electrical characteristics of power devices and Ics , 2008 .