论文信息 - Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition - 字舞流文

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

S. A. Suliman | O. Awadelkarim | C.-T. Wu | J. Ruzyllo | G. Dolny | S. Fonash | R. Ridley | B. Venkataraman