Noise characterization of a CMOS technology for the LHC experiments

[1]  R. Kingston,et al.  Semiconductor surface physics , 1957 .

[2]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[3]  J. A. Modolo,et al.  Radiation Effects in MOS Capacitors with Very Thin Oxides at 80°K , 1984, IEEE Transactions on Nuclear Science.

[4]  R.P. Jindal.  Noise associated with distributed resistance of MOSFET gate structures in integrated circuits , 1984, IEEE Transactions on Electron Devices.

[5]  Mario G. Ancona,et al.  Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides , 1986, IEEE Transactions on Nuclear Science.

[6]  A. Ziel.  Noise in solid state devices and circuits , 1986 .

[7]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[8]  S. Tedja,et al.  Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[9]  H. Williams,et al.  Analytical and experimental studies of thermal noise in MOSFET's , 1994 .

[10]  D. Fleetwood,et al.  1/f noise and radiation effects in MOS devices , 1994 .

[11]  Tso-Ping Ma,et al.  The impact of device scaling on the current fluctuations in MOSFET's , 1994 .

[12]  Cor Claeys,et al.  Impact of silicidation on the excess noise behaviour of MOS transistors , 1995 .

[13]  Sheng-Lyang Jang,et al.  Low-frequency 1/f noise model for short-channel LDD MOSFETs , 1998 .

[14]  D. R. Wolters,et al.  Variation of the exponent of flicker noise in MOSFETs , 1998 .

[15]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .

[16]  Petr Vasina,et al.  Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs , 1999 .